STH60N099DM9-2AG

Name: STH60N099DM9-2AG
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 600V 29A D2PAK

在产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	99mOhm @ 13.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2140 pF @ 400 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
最大功耗	179W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)

工作温度	-55°C ~ 150°C (TJ)