STGYA120M65DF2

STMicroelectronics

STGYA120M65DF2

Datasheet

模拟与电源

TRENCH GATE FIELD-STOP IGBT, M S

在产TO-247-3 Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge420 nC
IGBT TypeNPT, Trench Field Stop
输入类型Standard
制造商STMicroelectronics
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)202 ns
系列M
Switching Energy1.8mJ (on), 4.41mJ (off)
Td (on/off) @ 25°C66ns/185ns
Test Condition400V, 120A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 120A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)160 A
Current - Collector Pulsed (Icm)360 A
Power - Max625 W

机械

封装Tube
Package / CaseTO-247-3 Exposed Pad
供应商器件封装MAX247™

环境

工作温度-55°C ~ 175°C (TJ)