STGP4M65DF2

STMicroelectronics

STGP4M65DF2

Datasheet

模拟与电源

IGBT M SERIES 650V 4A LOW LOSS

在产TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge15.2 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商STMicroelectronics
安装类型Through Hole
Product StatusActive
Reverse Recovery Time (trr)133 ns
系列M
Switching Energy40µJ (on), 136µJ (off)
Td (on/off) @ 25°C12ns/86ns
Test Condition400V, 4A, 47Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)8 A
Current - Collector Pulsed (Icm)16 A
Power - Max68 W

机械

封装Tube
Package / CaseTO-220-3
供应商器件封装TO-220

环境

工作温度-55°C ~ 175°C (TJ)