STGB6M65DF2

STMicroelectronics

STGB6M65DF2

Datasheet

模拟与电源

IGBT TRENCH 650V 12A D2PAK

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge21.2 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商STMicroelectronics
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)140 ns
系列M
Switching Energy36µJ (on), 200µJ (off)
Td (on/off) @ 25°C15ns/90ns
Test Condition400V, 6A, 22Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 6A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)12 A
Current - Collector Pulsed (Icm)24 A
Power - Max88 W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装D2PAK

环境

工作温度-55°C ~ 175°C (TJ)