STGB20H65DFB2

STMicroelectronics

STGB20H65DFB2

Datasheet

模拟与电源

TRENCH GATE FIELD-STOP 650 V, 20

在产TO-263-4, D²Pak (3 Leads + Tab), TO-263AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge56 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商STMicroelectronics
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)215 ns
系列HB2
Switching Energy265µJ (on), 214µJ (off)
Td (on/off) @ 25°C16ns/78.8ns
Test Condition400V, 20A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 20A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)60 A
Power - Max147 W

机械

封装Tape & Reel (TR)
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA
供应商器件封装D2PAK-3

环境

工作温度-55°C~175°C(TJ)