STGB10M65DF2

STMicroelectronics

STGB10M65DF2

Datasheet

模拟与电源

IGBT 650V 10A D2PAK

在产TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge28 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商STMicroelectronics
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)96 ns
Switching Energy120µJ (on), 270µJ (off)
Td (on/off) @ 25°C19ns/91ns
Test Condition400V, 10A, 22Ohm, 15V
Vce(on) (Max) @ Vge, Ic2V @ 15V, 10A

电气

Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)40 A
Power - Max115 W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
供应商器件封装TO-263 (D2PAK)

环境

工作温度-55°C ~ 175°C (TJ)