STFW1N105K3

STMicroelectronics

STFW1N105K3

模拟与电源

MOSFET N-CH 1050V 1.4A ISOWATT

已停产TO-3P-3 Full Pack模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs11Ohm @ 600mA, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 100 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusNot For New Designs
系列SuperMESH3™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

电气

漏源电压1050 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
最大功耗20W (Tc)

机械

封装Tube
Package / CaseTO-3P-3 Full Pack
供应商器件封装TO-3PF

环境

工作温度-55°C ~ 150°C (TJ)