STFILED625

STMicroelectronics

STFILED625

模拟与电源

MOSFET N-CH 620V 4.5A I2PAKFP

停产/老旧TO-262-3 Full Pack, I²Pak模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2Ohm @ 1.9A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 50 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

电气

漏源电压620 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
最大功耗25W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Full Pack, I²Pak
供应商器件封装I2PAKFP (TO-281)

环境

工作温度-55°C~150°C(TJ)