STFILED524

STMicroelectronics

STFILED524

模拟与电源

MOSFET N-CH 525V 4A I2PAKFP

在产TO-262-3 Full Pack, I²Pak模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.6Ohm @ 2.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds340 pF @ 100 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

电气

漏源电压525 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
最大功耗20W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Full Pack, I²Pak
供应商器件封装I2PAKFP (TO-281)

环境

工作温度-55°C ~ 150°C (TJ)