STFI10LN80K5

STMicroelectronics

STFI10LN80K5

Datasheet

模拟与电源

MOSFET N-CH 800V 8A I2PAKFP

停产/老旧TO-262-3 Full Pack, I²Pak模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs630mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds427 pF @ 100 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusObsolete
系列MDmesh™ K5
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id5V @ 100µA

电气

漏源电压800 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
最大功耗20W (Tc)

机械

封装Tube
Package / CaseTO-262-3 Full Pack, I²Pak
供应商器件封装I2PAKFP (TO-281)

环境

工作温度-55°C~150°C(TJ)