STD9N65M2

Name: STD9N65M2
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 650V 5A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	900mOhm @ 2.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 100 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Active
系列	MDmesh™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
最大功耗	60W (Tc)

工作温度	150°C (TJ)