通用
| 基础料号 | STD830 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | STD830 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN, PNP |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 1A |
| Voltage - Collector Emitter Breakdown (Max) | 400V |
|---|---|
| Current - Collector (Ic) (Max) | 3A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 18 @ 700mA, 5V |
| Power - Max | 3W |
| 封装 | Tube |
|---|---|
| Package / Case | 8-DIP (0.300", 7.62mm) |
| 供应商器件封装 | 8-DIP |
| 工作温度 | 150°C (TJ) |
|---|