STD80N6F6

Name: STD80N6F6
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 60V 80A DPAK

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.5mOhm @ 40A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	7480 pF @ 25 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Obsolete
系列	DeepGATE™, STripFET™ VI
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
最大功耗	120W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)