STD7NM64N

STMicroelectronics

STD7NM64N

Datasheet

模拟与电源

MOSFET N-CH 640V 5A DPAK

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs1.05Ohm @ 2.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds363 pF @ 50 V
制造商STMicroelectronics
安装类型Surface Mount
Product StatusObsolete
系列MDmesh™ II
技术MOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压640 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
最大功耗60W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装DPAK

环境

工作温度150°C (TJ)