STD7N60M6

Name: STD7N60M6
Brand: STMicroelectronics

模拟与电源

DISCRETE

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	900mOhm @ 2.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	237 pF @ 100 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4.75V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	5.8A (Tc)
最大功耗	72W (Tc)

工作温度	-55°C ~ 150°C (TJ)