STD50NH02L-1

STMicroelectronics

STD50NH02L-1

模拟与电源

MOSFET N-CH 24V 50A I-PAK

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs10.5mOhm @ 25A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusObsolete
系列STripFET™ III
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id1.8V @ 250µA

电气

漏源电压24 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
最大功耗60W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装TO-251 (IPAK)

环境

工作温度-55°C ~ 175°C (TJ)