STD4NK100Z

Name: STD4NK100Z
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 1000V 2.2A DPAK

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	6.8Ohm @ 1.1A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	601 pF @ 25 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Active
系列	SuperMESH™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4.5V @ 50µA

漏源电压	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
最大功耗	90W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)