STD3NK60Z-1

STMicroelectronics

STD3NK60Z-1

Datasheet

模拟与电源

MOSFET N-CH 600V 2.4A IPAK

已停产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs3.6Ohm @ 1.2A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs11.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds311 pF @ 25 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusNot For New Designs
系列SuperMESH™
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4.5V @ 50µA

电气

漏源电压600 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
最大功耗45W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装I-PAK

环境

工作温度-55°C~150°C(TJ)