STD22NM20NT4

STMicroelectronics

STD22NM20NT4

Datasheet

模拟与电源

MOSFET N-CH 200V 22A DPAK

停产/老旧TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs105mOhm @ 11A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 25 V
制造商STMicroelectronics
安装类型Surface Mount
Product StatusObsolete
系列MDmesh™ II
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id5V @ 250µA

电气

漏源电压200 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
最大功耗100W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装DPAK

环境

工作温度-65°C ~ 150°C (TJ)