STD1NK60-1

Name: STD1NK60-1
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 600V 1A IPAK

在产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	8.5Ohm @ 500mA, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	156 pF @ 25 V
制造商	STMicroelectronics
安装类型	Through Hole
Product Status	Active
系列	SuperMESH™
技术	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	3.7V @ 250µA

漏源电压	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
最大功耗	30W (Tc)

工作温度	-55°C ~ 150°C (TJ)