STD12NM50ND

STMicroelectronics

STD12NM50ND

Datasheet

模拟与电源

MOSFET N-CH 500V 11A DPAK

停产/老旧TO-252-3, DPAK (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs380mOhm @ 5.5A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 50 V
制造商STMicroelectronics
安装类型Surface Mount
Product StatusObsolete
系列FDmesh™ II
技术MOSFET (Metal Oxide)
Vgs (Max)±25V
Vgs(th) (Max) @ Id5V @ 250µA

电气

漏源电压500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
最大功耗100W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
供应商器件封装DPAK

环境

工作温度150°C (TJ)