STD10PF06-1

STMicroelectronics

STD10PF06-1

模拟与电源

MOSFET P-CH 60V 10A IPAK

停产/老旧TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs200mOhm @ 5A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds850 pF @ 25 V
制造商STMicroelectronics
安装类型Through Hole
Product StatusObsolete
系列STripFET™ II
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
最大功耗40W (Tc)

机械

封装Tube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装I-PAK

环境

工作温度175°C(TJ)