STB30NM50N

Name: STB30NM50N
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 500V 27A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	115mOhm @ 13.5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2740 pF @ 50 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Obsolete
系列	MDmesh™ II
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	500 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	27A (Tc)
最大功耗	190W (Tc)

工作温度	150°C (TJ)