STB24N65M2

Name: STB24N65M2
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 650V 16A D2PAK

停产/老旧TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	230mOhm @ 8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 100 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Obsolete
系列	MDmesh™ M2
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
最大功耗	150W (Tc)

工作温度	-55°C ~ 150°C (TJ)