STB18N55M5

Name: STB18N55M5
Brand: STMicroelectronics

模拟与电源

MOSFET N-CH 550V 16A D2PAK

停产/老旧TO-263-3, D2PAK (2 Leads + Tab), TO-263AB模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	192mOhm @ 8A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1260 pF @ 100 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Obsolete
系列	MDmesh™ V
技术	MOSFET (Metal Oxide)
Vgs (Max)	±25V
Vgs(th) (Max) @ Id	5V @ 250µA

漏源电压	550 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
最大功耗	110W (Tc)

工作温度	150°C (TJ)