SCTWA35N65G2V

Name: SCTWA35N65G2V
Brand: STMicroelectronics

模拟与电源

TRANS SJT N-CH 650V 45A TO247

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	72mOhm @ 20A, 20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	73000 pF @ 400 V
制造商	STMicroelectronics
安装类型	Through Hole
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+20V, -5V
Vgs(th) (Max) @ Id	3.2V @ 1mA

漏源电压	650 V
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
最大功耗	208W (Tc)

工作温度	-55°C~175°C(TJ)