SCTW40N120G2V

Name: SCTW40N120G2V
Brand: STMicroelectronics

模拟与电源

SILICON CARBIDE POWER MOSFET 120

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1233 pF @ 800 V
制造商	STMicroelectronics
安装类型	Through Hole
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.9V @ 1mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
最大功耗	278W (Tc)

工作温度	-55°C~200°C(TJ)