SCTH70N120G2V-7

Name: SCTH70N120G2V-7
Brand: STMicroelectronics

模拟与电源

SILICON CARBIDE POWER MOSFET 120

在产模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	30mOhm @ 50A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	3540 pF @ 800 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	4.9V @ 1mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
最大功耗	469W (Tc)

封装	Tape & Reel (TR) Cut Tape (CT)
供应商器件封装	H2PAK-7

工作温度	-55°C ~ 175°C (TJ)