SCTH60N120G2-7

Name: SCTH60N120G2-7
Brand: STMicroelectronics

模拟与电源

PTD WBG & POWER RF

在产TO-263-8, D²Pak (7 Leads + Tab), TO-263CA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	52mOhm @ 30A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	94 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	1969 pF @ 800 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Active
技术	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5V @ 1mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
最大功耗	390W (Tc)

工作温度	-55°C~175°C(TJ)