SCTH50N120-7

Name: SCTH50N120-7
Brand: STMicroelectronics

模拟与电源

SICFET N-CH 1200V 65A H2PAK-7

停产/老旧TO-263-8, D²Pak (7 Leads + Tab), TO-263CA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	69mOhm @ 40A, 20V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 400 V
制造商	STMicroelectronics
安装类型	Surface Mount
Product Status	Obsolete
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	5.1V @ 1mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	20V
Current - Continuous Drain (Id) @ 25°C	65A
最大功耗	270W (Tc)

工作温度	-55°C ~ 175°C (TJ)