通用
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 3A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 133 pF @ 1000 V |
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -10V |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |