通用
| Rds On (Max) @ Id, Vgs | 55mOhm @ 20A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 39.5 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 400 V |
| 制造商 | STMicroelectronics |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | Automotive, AEC-Q101 |
| 技术 | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +18V, -5V |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA |