通用
| 基础料号 | MJD122 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Active |
| Transistor Type | NPN - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
|---|---|
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Power - Max | 20 W |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| 供应商器件封装 | TO-251 (IPAK) |
环境
| 工作温度 | 150°C (TJ) |
|---|