通用
| 基础料号 | MD2009 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 1.4A, 5.5A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
|---|---|
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Cutoff (Max) | 200µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 5 @ 5.5A, 5V |
| Power - Max | 58 W |
机械
| 封装 | Tube |
|---|---|
| Package / Case | TO-3P-3 Full Pack |
| 供应商器件封装 | TO-3PF |
环境
| 工作温度 | 150°C (TJ) |
|---|