通用
| 基础料号 | BD135 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Not For New Designs |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |

来自已导入产品 Attributes 的结构化电气、机械和环境参数。
| 基础料号 | BD135 |
|---|---|
| 制造商 | STMicroelectronics |
| 安装类型 | Through Hole |
| Product Status | Not For New Designs |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
|---|---|
| Current - Collector (Ic) (Max) | 1.5 A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Power - Max | 1.25 W |
| 封装 | Tube |
|---|---|
| Package / Case | TO-225AA, TO-126-3 |
| 供应商器件封装 | SOT-32 |
| 工作温度 | 150°C (TJ) |
|---|