通用
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 20V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1324 pF @ 1000 V |
| 制造商 | SMC Diode Solutions |
| 安装类型 | Through Hole |
| 包装 | Tube |
| 产品状态 | 在产 |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +25V, -10V |
| Vgs(th) (Max) @ Id | 4V @ 10mA |