通用
| 输出配置 | Phototransistor |
|---|---|
| 制造商 | Sharp Microelectronics |
| 安装类型 | Surface Mount |
| Product Status | Obsolete |
| Response Time | 35µs, 35µs |
| Sensing Distance | 0.063" (1.6mm) |
| Sensing Method | Through-Beam |
| 类型 | Unamplified |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
|---|---|
| Current - Collector (Ic) (Max) | 20 mA |
| Current - DC Forward (If) (Max) | 50 mA |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | 4-SMD |
环境
| 工作温度 | -25°C ~ 85°C |
|---|