GPA030A135MN-FDR

SemiQ

GPA030A135MN-FDR

模拟与电源

IGBT 1350V 60A 329W TO3PN

停产/老旧TO-3P-3, SC-65-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge300 nC
IGBT TypeTrench Field Stop
输入类型Standard
制造商SemiQ
安装类型Through Hole
Product StatusObsolete
Reverse Recovery Time (trr)450 ns
Switching Energy4.4mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C30ns/145ns
Test Condition600V, 30A, 5Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A

电气

Voltage - Collector Emitter Breakdown (Max)1350 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)90 A
Power - Max329 W

机械

封装Tube
Package / CaseTO-3P-3, SC-65-3
供应商器件封装TO-3PN

环境

工作温度-55°C~150°C(TJ)