GPA015A120MN-ND

SemiQ

GPA015A120MN-ND

模拟与电源

IGBT 1200V 30A 212W TO3PN

停产/老旧TO-3P-3, SC-65-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge210 nC
IGBT TypeNPT and Trench
输入类型Standard
制造商SemiQ
安装类型Through Hole
Product StatusObsolete
Reverse Recovery Time (trr)320 ns
Switching Energy1.61mJ (on), 530µJ (off)
Td (on/off) @ 25°C25ns/166ns
Test Condition600V, 15A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 15A

电气

Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)45 A
Power - Max212 W

机械

封装Tube
Package / CaseTO-3P-3, SC-65-3
供应商器件封装TO-3PN

环境

工作温度-55°C~150°C(TJ)