US5U30TR

Name: US5U30TR
Brand: Rohm Semiconductor

模拟与电源

MOSFET P-CH 20V 1A TUMT5

在产6-SMD (5 Leads), Flat Lead模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	390mOhm @ 1A, 4.5V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 10 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	2V @ 1mA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
最大功耗	1W (Ta)

工作温度	150°C (TJ)