US5U1TR

Rohm Semiconductor

US5U1TR

Datasheet

模拟与电源

MOSFET N-CH 30V 1.5A TUMT5

在产6-SMD (5 Leads), Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs240mOhm @ 1.5A, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds80 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1.5V @ 1mA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
最大功耗1W (Ta)

机械

封装Tape & Reel (TR)
Package / Case6-SMD (5 Leads), Flat Lead
供应商器件封装TUMT5

环境

工作温度150°C(TJ)