TT8K11TCR

Rohm Semiconductor

TT8K11TCR

模拟与电源

MOSFET 2N-CH 30V 3A 8TSST

已停产8-SMD, Flat Lead模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs71mOhm @ 3A, 10V
基础料号TT8K11
配置2 N-Channel (Dual)
FET FeatureLogic Level Gate, 4V Drive
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 10V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1A

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C3A
Power - Max1W

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SMD, Flat Lead
供应商器件封装8-TSST

环境

工作温度150°C (TJ)