SP8M51HZGTB

Name: SP8M51HZGTB
Brand: Rohm Semiconductor

模拟与电源

MOSFET N/P-CH 100V 3A/2.5A 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V
基础料号	SP8M51
配置	N and P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 5V, 12.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	610pF @ 25V, 1550pF @ 25V
制造商	Rohm Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	100V
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 2.5A (Ta)
Power - Max	2W (Ta)

工作温度	150°C (TJ)