SH8MC5TB1

Rohm Semiconductor

SH8MC5TB1

Datasheet

模拟与电源

MOSFET N/P-CH 60V 6.5A/7A 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs32mOhm @ 6.5A, 10V, 33mOhm @ 7A, 10V
基础料号SH8MC5
配置N and P-Channel
Gate Charge (Qg) (Max) @ Vgs7.6nC @ 10V, 50nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds460pF @ 30V, 2630pF @ 30V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 7A (Ta)
Power - Max2W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度150°C (TJ)