SH8K26GZ0TB

Rohm Semiconductor

SH8K26GZ0TB

Datasheet

模拟与电源

MOSFET 2N-CH 40V 6A 8SOP

已停产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs38mOhm @ 6A, 10V
基础料号SH8K26
配置2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs2.9nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 10V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 1mA

电气

漏源电压40V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Power - Max2W (Ta)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SOP

环境

工作温度150°C (TJ)