通用
| Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |
| 制造商 | Rohm Semiconductor |
| 安装类型 | Through Hole |
| Product Status | Active |
| 技术 | SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) | +22V, -4V |
| Vgs(th) (Max) @ Id | 5.6V @ 5mA |