SCT2H12NYTB

Name: SCT2H12NYTB
Brand: Rohm Semiconductor

模拟与电源

SICFET N-CH 1700V 4A TO268

在产TO-268-3, D3PAK (2 Leads + Tab), TO-268AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	1.5Ohm @ 1.1A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	184 pF @ 800 V
制造商	Rohm Semiconductor
安装类型	Surface Mount
包装	Tape & Reel (TR) Cut Tape (CT)
产品状态	在产
技术	SiCFET (Silicon Carbide)
Vgs (Max)	+22V, -6V
Vgs(th) (Max) @ Id	4V @ 410µA

漏源电压	1700 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
最大功耗	44W (Tc)

Package / Case	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
供应商器件封装	TO-268

工作温度	175°C (TJ)