通用
| Rds On (Max) @ Id, Vgs | 208mOhm @ 7A, 18V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 800 V |
| 制造商 | Rohm Semiconductor |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | +22V, -6V |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |