RYE002N05TCL

Rohm Semiconductor

RYE002N05TCL

Datasheet

模拟与电源

MOSFET N-CH 50V 200MA EMT3

已停产SC-75, SOT-416模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs2.2Ohm @ 200mA, 4.5V
基础料号RYE002
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds26 pF @ 10 V
制造商Rohm Semiconductor
安装类型Surface Mount
Product StatusNot For New Designs
技术MOSFET (Metal Oxide)
Vgs (Max)±8V
Vgs(th) (Max) @ Id800mV @ 1mA

电气

漏源电压50 V
Drive Voltage (Max Rds On, Min Rds On)0.9V, 4.5V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
最大功耗150mW (Ta)

机械

封装Tape & Reel (TR)
Package / CaseSC-75, SOT-416
供应商器件封装EMT3

环境

工作温度150°C(TJ)