RV4E031RPTCR1

Name: RV4E031RPTCR1
Brand: Rohm Semiconductor

模拟与电源

MOSFET P-CH 30V 3.1A DFN1616-6

在产6-PowerWFDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	105mOhm @ 3.1A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	460 pF @ 10 V
制造商	Rohm Semiconductor
安装类型	Surface Mount, Wettable Flank
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 1mA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	3.1A (Ta)
最大功耗	1.5W

封装	Tape & Reel (TR)